Single event transient (SET) sensitivity of radiation hardened and COTS voltage comparators

被引：19

作者：

Koga, R ^{[1
]}

Crain, SH ^{[1
]}

Crawford, KB ^{[1
]}

Moss, SC ^{[1
]}

LaLumondiere, SD ^{[1
]}

Howard, JW ^{[1
]}

机构：

[1] Aerospace Corp, Los Angeles, CA 90009 USA

来源：

2000 IEEE RADIATION EFFECTS DATA WORKSHOP - WORKSHOP RECORD | 2000年

关键词：

D O I：

10.1109/REDW.2000.896269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single event transient (SET) sensitivity of a radiation hardened voltage comparator type with vertical input transistors is compared with that observed for a COTS device type made up of lateral transistors. The cause of the difference in sensitivity is investigated.

引用

页码：53 / 60

页数：8

共 7 条

[1]

ECOFFET R, 1994, IEEE RAD EFF DAT WOR, P72

[2]

GAY C, 1993, P 16 ANN AAS GUID CO

[3] Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions [J].