Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95 multiple quantum wells

被引：507

作者：

Narukawa, Y ^{[1
]}

Kawakami, Y ^{[1
]}

Fujita, S ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] NICHIA CHEM IND LTD, DEPT RES & DEV, ANAN, TOKUSHIMA 774, JAPAN

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.55.R1938

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dynamical behavior of radiative recombination has been assessed in the In0.20Ca0.80N (2.5 nm)/ In0.05Ga0.95N (6.0 nm) multiple-quantum-well structure by means of transmittance, electroreflectance (ER), photoluminescence excitation (PLE), and time-resolved photoluminescence (TRPL) spectroscopy. The PL at 20 K was mainly composed of two emission bands whose peaks are located at 2.920 eV and 3.155 eV. Although the peak at 3.155 eV was weak under low photoexcitation, it grew superlinearly with increasing excitation intensity. The ER and PLE revealed that the transition at 3.155 eV is due to the excitons at quantized levels between n = 1 conduction and n = 1 A(Gamma(9 upsilon)) valence bands, while the main PL peak at 2.920 eV is attributed to the excitons localized at the trap centers within the well. The TRPL features were well understood as the effect of localization where photogenerated excitons are transferred from the n = 1 band to the localized centers, and then are localized further to the tail state.

引用

页码：R1938 / R1941

页数：4

共 20 条

[1] Excitonic emissions from hexagonal GaN epitaxial layers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2784-2786

[2]

CHICHIBU S, IN PRESS APPL PHYS L

[3] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].

DINGLE, R ;

SELL, DD ;

STOKOWSKI, SE ;

ILEGEMS, M .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+

[4] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].

Gil, B ;

Briot, O ;

Aulombard, RL .

PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031

[5] EXCITON TRANSFER BETWEEN LOCALIZED STATES IN CDS1-XSEX ALLOYS [J].

GOURDON, C ;

LAVALLARD, P .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1989, 153 (02) :641-652

[6] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[7] Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer [J].

Kawakami, Y ;

Peng, AG ;

Narukawa, Y ;

Fujita, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1414-1416

[8] Thermodynamic analysis of InxGa1-xN alloy composition grown by metalorganic vapor phase epitaxy [J].

Koukitu, A ;

Takahashi, N ;

Taki, T ;

Seki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (6A) :L673-L675

[9] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].

NAKAMURA, S ;

SENOH, N ;

IWASA, N ;

NAGAHAMA, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799

[10] InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B) :L217-L220

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