Point defect engineering strategies to suppress A-center formation in silicon

被引：69

作者：

Chroneos, A. ^{[2
]}

Londos, C. A. ^{[3
]}

Sgourou, E. N. ^{[3
]}

Pochet, P. ^{[1
]}

机构：

[1] CEA UJF, INAC, Lab Simulat Atomist L Sim, SP2M, F-38054 Grenoble 9, France

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] Univ Athens, Solid State Phys Sect, Athens 15784, Greece

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 24期

关键词：

D O I：

10.1063/1.3666226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) and their conversion to VO2 clusters in electron-irradiated silicon. The experimental results are consistent with previous reports that Sn doping suppresses the formation of the A-center. We introduce a model to account for the observed differences under both Sn-poor and Sn-rich doping conditions. Using density functional theory calculations, we propose point defect engineering strategies to reduce the concentration of the deleterious A-centers in silicon. We predict that doping with lead, zirconium, or hafnium will lead to the suppression of the A-centers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666226]

引用

页数：3

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