Optimizing ALD HfO2 for Advanced Gate Stacks with Interspersed UV and Thermal Treatments- DADA and MDMA Variations, Combinations, and Optimization

被引：7

作者：

Clark, R. D. ^{[1
]}

Consiglio, S. ^{[1
]}

Nakamura, G. ^{[1
]}

Trickett, Y. ^{[1
]}

Leusink, G. J. ^{[1
]}

机构：

[1] TEL Technol Ctr, Albany, NY 12203 USA

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 7 | 2011年 / 41卷 / 02期

关键词：

ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; METAL GATE; HIGH-KAPPA; IMPROVEMENT; OXIDES; FILMS;

D O I：

10.1149/1.3633657

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have recently reported electrical performance improvements of atomic layer deposited (ALD) HfO2 films grown by use of a cyclical deposition and annealing scheme (termed DADA) compared to a single deposition with or without a post-deposition anneal (PDA). Likewise, a process for improving leakage and reliability characteristics of ALD HfZrO by use of an interspersed room temperature ultraviolet ozone (RTUVO) treatments, referred to as multi-deposition multi-room temperature annealing (MDMA), has recently been reported. We have developed a version of this MDMA process on our 300 mm clustered tool with in situ RTUVO treatments interspersed between ALD HfO2 depositions. In this report we compare these two processes (DADA vs. MDMA) for HfO2 dielectric formation in a low temperature MOSCAP flow with in-line measurements of the HfO2 and interface layer thicknesses.

引用

页码：79 / 88

页数：10

共 28 条

[1] Dipole formation at direct-contact HfO2/Si interface [J].

Abe, Yasuhiro ;

Miyata, Noriyuki ;

Shiraki, Yasuhiro ;

Yasuda, Tetsuji .

APPLIED PHYSICS LETTERS, 2007, 90 (17)

[2]

[Anonymous], 2007, ECS T

[3]

[Anonymous], IEDM

[4] Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High-k Gate Stacks [J].

Bersuker, Gennadi ;

Park, Chang Seo ;

Wen, Huang-Chun ;

Choi, K. ;

Price, Jimmy ;

Lysaght, Patrick ;

Tseng, Hsing-Huang ;

Sharia, O. ;

Demkov, Alex ;

Ryan, Jason T. ;

Lenahan, P. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (09) :2047-2056

[5] Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks [J].

Charbonnier, M. ;

Leroux, C. ;

Cosnier, V. ;

Besson, P. ;

Martina, F. ;

Ghibaudo, G. ;

Reimbold, G. .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1740-1742

[6] Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT [J].

Chin, Albert ;

Chang, M. F. ;

Lin, S. H. ;

Chen, W. B. ;

Lee, P. T. ;

Yeh, F. S. ;

Liao, C. C. ;

Li, M. -F. ;

Su, N. C. ;

Wang, S. J. .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1728-1732

[7] Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide [J].

Choi, Kisik ;

Wen, Huang-Chun ;

Bersuker, Gennadi ;

Harris, Rusty ;

Lee, Byoung Hun .

APPLIED PHYSICS LETTERS, 2008, 93 (13)

[8] Physical and Electrical Effects of the Dep-Anneal-Dep-Anneal (DADA) Process for HfO2 in High K/Metal Gate Stacks [J].

Clark, R. D. ;

Aoyama, S. ;

Consiglio, S. ;

Nakamura, G. ;

Leusink, G. J. .

SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 2011, 35 (04) :815-834

[9] High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes [J].

Clark, R. D. ;

Consiglio, S. ;

Wajda, C. S. ;

Leusink, G. J. ;

Sugawara, T. ;

Nakabayashi, H. ;

Jagannathan, H. ;

Edge, L. F. ;

Jamison, P. ;

Paruchuri, V. K. ;

Iijima, R. ;

Takayanagi, M. ;

Linder, B. P. ;

Bruley, J. ;

Copel, M. ;

Narayanan, V. .

ATOMIC LAYER DEPOSITION APPLICATIONS 4, 2008, 16 (04) :291-+

[10]

Conley JF, 2004, MATER RES SOC SYMP P, V811, P5

← 1 2 3 →