Structural properties of porous 6H silicon carbide

被引：16

作者：

Newby, Pascal ^{[1
,2
]}

Bluet, Jean-Marie ^{[1
]}

Aimez, Vincent ^{[2
]}

Frechette, Luc G. ^{[2
]}

Lysenko, Vladimir ^{[1
]}

机构：

[1] Univ Lyon, INL, CNRS, INSA Lyon,UMR5270, F-69621 Villeurbanne, France

[2] Univ Sherbrooke, Ctr Res Nanofabricat Nanocaracterisat, CNR2, Sherbrooke, PQ, Canada

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6 | 2011年 / 8卷 / 06期

关键词：

porous; silicon carbide; anodisation; morphology; Raman; LAYERS;

D O I：

10.1002/pssc.201000222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we have studied the effect of current density and UV illumination on the morphology of porous SiC formed by electrochemical etching. Raman spectroscopy was also carried out, in order to correlate the porous SiC structure with the obtained spectra. We show that current density is important in controlling the type of structure, whereas UV illumination plays a role in pore nucleation at lower current densities. The shape of the Raman spectra, in particular the longitudinal optical (LO) peak, also depends strongly on the SiC nanoscale morphology. [GRAPHICS] Example of "sinuous" morphology of porous SiC. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1950 / 1953

页数：4

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