Engineering ferroelectric tunnel junctions through potential profile shaping

被引:33
|
作者
Boyn, S. [1 ,2 ]
Garcia, V. [1 ,2 ]
Fusil, S. [1 ,2 ]
Carretero, C. [1 ,2 ]
Garcia, K. [1 ,2 ]
Xavier, S. [3 ]
Collin, S. [1 ,2 ]
Deranlot, C. [1 ,2 ]
Bibes, M. [1 ,2 ]
Barthelemy, A. [1 ,2 ]
机构
[1] CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France
[2] Univ Paris 11, F-91405 Orsay, France
[3] Thales Res & Technol, F-91767 Palaiseau, France
来源
APL MATERIALS | 2015年 / 3卷 / 06期
基金
欧洲研究理事会;
关键词
GIANT ELECTRORESISTANCE;
D O I
10.1063/1.4922769
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
收藏
页数:6
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