Influence of Probe Tip Calibration on Measurement Accuracy of Small-Signal Parameters of Advanced BiCMOS HBTs

被引：0

作者：

Rumiantsev, A. ^{[1
,2
]}

Sakalas, P. ^{[2
,3
]}

Derrier, N. ^{[4
]}

Celi, D. ^{[4
]}

Schroter, M. ^{[2
,5
]}

机构：

[1] Cascade Microtech GmbH, Suss Str 1, D-01561 Sacka, Germany

[2] Tech Univ Dresden, CEDIC, D-01062 Dresden, Germany

[3] State Scientif Res Inst, FRL, LT-01108 Vilnius, Lithuania

[4] STMicroelect, F-38926 Crolles, France

[5] Univ Calif San Diego, Dept ECE, La Jolla, CA 92093 USA

来源：

2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2011年

关键词：

Silicon-germanium HBT; silicon bipolar/BiCMOS process technology; calibration; S-Parameters; de-embedding;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents investigation results of the probe-tip calibration impact on the BiCMOS HBT small-signal parameter measurement accuracy. Popular calibration procedures were applied on the same data set and followed by the two-step de-embedding from the device dedicated Compete-Open and Complete-Short dummy elements. Experimental results showed that the observed difference in cold HBT parameters and parameters of passive devices was minimized by the de-embedding step. The f(T) and f(MAX) demonstrated higher sensitivity to the probe-tip calibration residual errors.

引用

页码：203 / 206

页数：4

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