P-n junction formation in ITO/p-Si structure by powerful laser radiation for solar cells applications

被引：4

作者：

Medvid, Artur ^{[1
]}

Onufrievs, Pavels ^{[1
]}

Dauksta, Edvins ^{[1
]}

Barloti, Janis ^{[1
]}

Ulyashin, Alexander ^{[2
]}

Dmytruk, Igor ^{[3
]}

Pundyk, Iryna ^{[3
]}

机构：

[1] Riga Tech Univ, 14 Azenes Str, LV-1048 Riga, Latvia

[2] SINTEF, Mat & Chem, N-0314 Oslo, Norway

[3] Natl Taras Shevchenko Univ Kiev, Fac Phys, Kiev, Ukraine

来源：

INTER ACADEMIA 2010: GLOBAL RESEARCH AND EDUCATION | 2011年 / 222卷

关键词：

ITO; solar cells; laser irradiation; nanostructures; photoluminescence; atomic force microscope; SEMICONDUCTOR; TEMPERATURE; LATTICE;

D O I：

10.4028/www.scientific.net/AMR.222.225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was shown that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown.

引用

页码：225 / +

页数：2

共 6 条

[1] Effect of laser irradiation on the properties of indium tin oxide films deposited at room temperature by pulsed laser deposition [J].