Ultra-trace element analysis on Si wafer surface by total reflection X-ray photoelectron spectroscopy

被引：0

作者：

Iijima, Y

Miyoshi, K

Saito, S

机构：

[1] Jeol Ltd, Electron Opt Div, Applicat & Res Ctr, Akishima, Tokyo 1968558, Japan

[2] NEC Co, ULSI Device Dev Labs, Crystal Technol Dev Lab, Sagamihara, Kanagawa 2291198, Japan

来源：

BUNSEKI KAGAKU | 1998年 / 47卷 / 11期

关键词：

total reflection photoelectron spectroscopy; XPS; TXRF; Si wafer; Fe; Cu; detection limit; sampling depth;

D O I：

暂无

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

X-ray photoelectron spectroscopy (XPS) is an effective method for analyzing the chemical bonding state of material surface. The detection limit of XPS, however, is inferior to other analyzing methods, such as SIMS and TXRF. The total reflection XPS (TRXPS) is a method for improving the detection sensitivity. In this study, we examined the validity of TRXPS for the analyzing the contamination on a Si wafer surface. In this experiment, the glancing angle of X-ray(Al-K alpha) was 1.1 degrees, which satisfied the total reflection condition. The samples used were Si wafers contaminated by Fe and Cu. The detection limit of TRXPS was found to be 9E+10 atoms/cm(2) for Fe and Cu, which was improved by 40 times in comparison with that of the normal-type pe XPS. Accordingly, it can be said that TRXPS is a very effective method for the analyzing the contamination on a Si wafer.

引用

页码：873 / 879

页数：7

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