IR Spectroscopic Determination of the Refractive Index and Thickness of Hydrogenated Silicon Layers

被引：0

作者：

Timoshenkov, S. P. ^{[1
]}

Pelipas, V. P. ^{[1
]}

Simonov, B. M. ^{[1
]}

Britkov, O. M. ^{[1
]}

Kalugin, V. V. ^{[1
]}

机构：

[1] Tech Univ, Moscow State Inst Elect Technol, Moscow 124498, Russia

来源：

INORGANIC MATERIALS | 2011年 / 47卷 / 06期

关键词：

Refractive Index; Optical Thickness; Hydrogen Center; Short Wave Length; Uncer Tainty;

D O I：

10.1134/S0020168511060215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

IR spectroscopic techniques widely used to determine the thickness and refractive index of layers and thin films of various materials are adapted for determining those of hydrogenated silicon layers. Based on a literature analysis, three formulas are chosen which enable the refractive index and thickness of such layers to be determined from reflection and transmission spectra. The formulas are applicable, with some restrictions, to other samples in the form of relatively transparent layers (films) on transparent substrates. Experimental data are presented that illustrate the use of the formulas.

引用

页码：575 / 578

页数：4

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