Enhancement in piezoelectric responses of AlN thin films by co-addition of Mg and Ta

被引：5
|
作者：
Anggraini, Sri Ayu [1 ]
Uehara, Masato [1 ]
Hirata, Kenji [1 ]
Yamada, Hiroshi [1 ]
Akiyama, Morito [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Sensing Syst Res Ctr SSRC, Kyushu Ctr, 807-1 Shukumachi, Tosu, Saga, Japan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2022年 / 276卷
关键词：
AlN; Piezoelectricity; Thin film; Sputtering; Magnesium; Tantalum; MICROSTRUCTURE; ZR; TI;
D O I：
10.1016/j.matchemphys.2021.125394
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The piezoelectric charge coefficient (d(33)) of aluminum nitride (AlN) was successfully increased by co-addition of magnesium (Mg) and tantalum (Ta). While addition of either Mg or Ta as a single dopant only slightly enhanced the d(33), greater d(33) can be obtained when 24 at.% MgTa was alloyed with AlN at Mg to Ta ratio approximate to 3. The highest d(33) value was found to be 10.4 pC/N for (MgTa)(0.24)Al0.76N, which is a 73% increase from that of AlN. Our study also revealed how addition of Mg and/or Ta could affect the crystallinity of the thin films and eventually the corresponding d(33).
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页数：6
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