Enhancement in piezoelectric responses of AlN thin films by co-addition of Mg and Ta

被引：5

作者：

Anggraini, Sri Ayu ^{[1
]}

Uehara, Masato ^{[1
]}

Hirata, Kenji ^{[1
]}

Yamada, Hiroshi ^{[1
]}

Akiyama, Morito ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Sensing Syst Res Ctr SSRC, Kyushu Ctr, 807-1 Shukumachi, Tosu, Saga, Japan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2022年 / 276卷

关键词：

AlN; Piezoelectricity; Thin film; Sputtering; Magnesium; Tantalum; MICROSTRUCTURE; ZR; TI;

D O I：

10.1016/j.matchemphys.2021.125394

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The piezoelectric charge coefficient (d(33)) of aluminum nitride (AlN) was successfully increased by co-addition of magnesium (Mg) and tantalum (Ta). While addition of either Mg or Ta as a single dopant only slightly enhanced the d(33), greater d(33) can be obtained when 24 at.% MgTa was alloyed with AlN at Mg to Ta ratio approximate to 3. The highest d(33) value was found to be 10.4 pC/N for (MgTa)(0.24)Al0.76N, which is a 73% increase from that of AlN. Our study also revealed how addition of Mg and/or Ta could affect the crystallinity of the thin films and eventually the corresponding d(33).

引用

页数：6

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