Preparation of SrBi2Ta2O9 ferroelectric thin film by RF magnetron sputtering

被引：10
作者：
Suu, K [1 ]
Masuda, T [1 ]
Nishioka, Y [1 ]
Tani, N [1 ]
机构：
[1] Ulvac Japan Ltd, Inst Super Mat, Chiba 2891226, Japan
来源：
INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期
关键词：
SrBi2Ta2O9; ferroelectric thin film; ferroelectric RAM; rf sputtering; compositional control;
D O I：
10.1080/10584589808202081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SrBi2Ta2O9 (SBT) thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by rf magnetron sputtering using a 12-inch ceramic SET single target. It is found that several sputtering parameters such as argon (Ar) pressure and rf power were very effective to control the Bi content of SET thin films which is essential for obtaining good ferroelectric properties.
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收藏
页码：407 / 418
页数：12
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