Growth of diamond particles on sharpened Si tips

被引：8
作者：
Givargizov, EI
Aksenova, LL
Galstyan, VG
Kiselev, AN
Kuznetsov, AV
Muratova, VI
Rakova, EV
Stepanova, AN
机构：
[1] Institute of Crystallography, Russian Academy of Sciences
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 162卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(95)00945-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Growth of diamond particles on sharp silicon tips in a hot-filament CVD process was investigated. Highly preferential deposition of the particles on the ends of the tips has been found. An explanation is given for the phenomenon based on the idea that the ends have an increased temperature due to localized recombination of hydrogen, involved in the process, on the tips. HRTEM and electron diffraction investigations of the initial stages of the growth have demonstrated a direct localized epitaxial growth of diamond on silicon.
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页码：73 / 78
页数：6
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