Preparation and characterization of carbon nanotubes by pulsed laser ablation in water for optoelectronic application

被引:86
作者
Ismail, Raid A. [1 ]
Mohsin, Mayyadah H. [1 ]
Ali, Abdulrahman K. [1 ]
Hassoon, Khaleel, I [1 ]
Erten-Ela, Sule [2 ]
机构
[1] Univ Technol Baghdad, Dept Appl Sci, Baghdad, Iraq
[2] Ege Univ, Solar Energy Inst, TR-35100 Izmir, Turkey
关键词
CNTs; Laser ablation; CNTs thickness; Laser wavelength; Hybrid photodetector; MOLECULAR-SIEVES; NANOPARTICLES; GROWTH; PERFORMANCE; ACETYLENE; SILICON;
D O I
10.1016/j.physe.2020.113997
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the present work, preparation of multi-walled carbon nanotubes (MWCNTs) and carbon nanoparticles (CNPs) by using pulsed laser ablation of a graphite target in water without using catalyst was demonstrated. The effect of laser wavelength on the optical absorption and structural properties has been studied. X-ray diffraction (XRD) data shows the synthesized CNTs were polycrystalline and a peak related to the diamond structure was observed. Scanning electron microscope (SEM) investigation displays that the average diameter of CNTs synthesized with 532 nm was 20 nm and few micrometers in length, while the CNTs synthesized with 1064 nm have an average diameter of 75 nm and lengths of few sub-micrometers. Some of CNPs were noticed to deposit on the CNTs. Transmission electron microscope (TEM) was used to study the morphology of MWCNTs. Raman spectra confirm formation of MWCNTs during the presence of three peaks belonged to D-band, G-band and 2D-band. The intensity ratio of I-G/I-D is larger than unity for MWCTs prepared by two laser wavelengths. The colloidal MWCNTs prepared by 532 nm laser pulses showed higher absorption than that of MWCNTs prepared with 1064 nm. The current-voltage characteristics and responsivity of hybrid In/p-MWCNTs/n-Si heterojunction photodetectors prepared at different CNTs film thicknesses were investigated at room temperature. The responsivity of hybrid MWCNTs/n-Si photodetector has two peaks of response, the first peak was found at 650 nm and the second peak located at 850 nm. The maximum responsivity was 0.53 A/W at 532 nm was found for the photodetector fabricated with 532 nm laser. The energy band diagram of MWCNTs/Si heterojunction was constructed under illumination condition.
引用
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页数:8
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