Thermal Performance of a Dual 1.2 kV, 400 A Silicon-Carbide MOSFET Power Module

被引：14

作者：

Boteler, Lauren ^{[1
]}

Urciuoli, Damian ^{[1
]}

Ovrebo, Gregory ^{[1
]}

Ibitayo, Dimeji ^{[1
]}

Green, Ronald ^{[1
]}

机构：

[1] USA, Res Lab, Power Components Branch, Adelphi, MD 20783 USA

来源：

26TH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2010 | 2010年

关键词：

Silicon carbide; thermal performance; power module; MOSFET; thermal modeling;

D O I：

10.1109/STHERM.2010.5444297

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Power electronics are reaching the temperature limits of silicon; therefore alternative materials such as silicon carbide (SiC) are currently being explored. An all SiC 1.2 kV, 400 A dual MOSFET power module has been fabricated and tested for thermal performance. The module was designed as a drop-in replacement for standard commercial modules with an integrated liquid cooling system that reduces thermal resistance. The heat sink has been experimentally tested up to 400 A (158 W/cm(2)) showing a device temperature rise of as little as 24 degrees C. Thermal modeling was also performed and the results were compared to experimental data.

引用

页码：170 / 175

页数：6