Development of porous-silicon-based active microfilters

被引:17
作者
Campbell, Jenna [1 ]
Corno, James A. [1 ]
Larsen, Nicole [1 ]
Gole, James L. [1 ,2 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mech Engn, Atlanta, GA 30332 USA
关键词
D O I
10.1149/1.2811868
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
With a goal of preparing silicon-based interactive filters in the micropore range, we have developed the first single-step etch-liftoff procedure (one-step separation) based on the formation and removal of macroporous silicon layers. With silicon wafers whose resistivities are in the range from 14 to 22 Omega cm, we are able to create, in a surprisingly controlled manner, films whose pore diameters range from 1-2 m and whose thickness ranges from 3 to 70 mu m. These silicon-based films (filters), which carry a polarizing negative charge, represent an alternative to porous alumina (films) filters (pore diameter not yet in the 1-2 mu m range) both in terms of their size range and potential interaction-reaction at elevated temperature. Preliminary experiments demonstrate that platinum and copper can be introduced to these filters using electroless solutions with a goal to creating an effective reductive surface. Using these and alternate material combinations, interactive-reactive filters in the 1 mu m size range that operate at temperatures well in excess of porous polymer films can be realized. (c) 2007 The Electrochemical Society.
引用
收藏
页码:D128 / D132
页数:5
相关论文
共 37 条
[1]   A MICROSTRUCTURAL STUDY OF POROUS SILICON [J].
BERBEZIER, I ;
HALIMAOUI, A .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5421-5425
[2]   Crystalline Si thin-film solar cells: a review [J].
Bergmann, RB .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (02) :187-194
[3]   Porous silicon as an intermediate layer for thin-film solar cell [J].
Bilyalov, R ;
Stalmans, L ;
Beaucarne, G ;
Loo, R ;
Caymax, M ;
Poortmans, J ;
Nijs, J .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) :477-485
[4]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[5]   A mechanism for electroless Cu plating onto Si [J].
dosSantos, SG ;
Pasa, AA ;
Hasenack, CM .
MICROELECTRONIC ENGINEERING, 1997, 33 (1-4) :149-155
[6]   Stabilization of the photoluminescence from porous silicon: The competition between photoluminescence and dissolution [J].
Dudel, FP ;
Gole, JL .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :402-406
[7]  
FEDOROV A, 2004, PHYS STATUS SOLIDI C, V1, pS188
[8]   PROPERTIES OF SILICON-ELECTROLYTE JUNCTIONS AND THEIR APPLICATION TO SILICON CHARACTERIZATION [J].
FOLL, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01) :8-19
[9]   Porous silicon layer coupled with thermoelectric cooler: a humidity sensor [J].
Foucaran, A ;
Sorli, B ;
Garcia, M ;
Pascal-Delannoy, F ;
Giani, A ;
Boyer, A .
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 79 (03) :189-193
[10]  
GAO H, 2004, CATAL LETT, V27, P297