Reliability and Hardware Implementation of Rank Modulation Flash Memory

We review a novel data representation scheme for NAND flash memory named rank modulation (Rill), and discuss its hardware implementation. We show that under the normal threshold voltage (V-th) variations, RM has intrinsic read reliability advantage over conventional multiple-level cells. Test results demonstrating superior reliability using commercial flash chips are reviewed and discussed. We then present a read method based on relative sensing time, which can obtain the rank of all cells in the group in one read cycle. The improvement in reliability and read speed enable similar program-and-verify time in RM as that of conventional MLC flash.