Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation

被引：12

作者：

Carria, E. ^{[1
,2
]}

Mio, A. M. ^{[1
]}

Gibilisco, S. ^{[1
,2
]}

Miritello, M. ^{[2
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,3
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] CNR, MATIS IMM, I-95123 Catania, Italy

[3] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

关键词：

PHASE-CHANGE MATERIALS; THIN-FILMS; RESISTANCE MEASUREMENTS; TRANSITION; MEMORY;

D O I：

10.1149/1.3527941

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amorphous to crystal transition temperature has been measured in capped (10 nm SiO2) and uncapped Ge2Sb2Te5 (GST) films (20 nm thick) after irradiation with a 40 keV Ge+ in the range between 5 x 10(13) and 1 x 10(15) ions/cm(2). In the capped samples the crystallization temperature increases with fluence (15 degrees C at 1 x 10(15) ions/cm(2)). This effect is due to the doping of the GST layer with a few atom percent of recoiled O and Si atoms. The influence of the chemical species on the crystallization kinetics overcomes the effect of the ion-induced local rearrangement that instead decreases the transition temperature by a few degrees in the uncapped samples. Recoil implantation through the use of a thin capping layer may then be a viable alternative to the direct doping of chalcogenide thin films. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3527941] All rights reserved.

引用

页码：H124 / H127

页数：4

共 50 条

[31] Crystallization of sputtered-deposited and ion implanted amorphous Ge2Sb2Te5 thin films [J].

Rimini, E. ;

De Bastiani, R. ;

Carria, E. ;

Grimaldi, M. G. ;

Nicotra, G. ;

Bongiorno, C. ;

Spinella, C. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)

[32] Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser [J].

Bai, N. ;

Liu, F. R. ;

Han, X. X. ;

Zhu, Z. ;

Liu, F. ;

Lin, X. ;

Sun, N. X. .

OPTICS AND LASER TECHNOLOGY, 2015, 74 :11-15

[33] An explanation of the crystallization of amorphous Ge2Sb2Te5 films induced by a short Gaussian laser pulse [J].

Liu, F. R. ;

Bai, N. ;

Zhao, J. J. ;

Han, X. X. ;

Zhou, W. P. ;

Lin, X. ;

Sun, N. X. .

APPLIED PHYSICS LETTERS, 2013, 103 (05)

[34] Investigation of crystallization behaviors of nitrogen-doped Ge2Sb2Te5 films by thermomechanical characteristics [J].

Park, Il-Mok ;

Yang, Tae-Youl ;

Jung, Sug Woo ;

Kim, Young Kuk ;

Horii, Hideki ;

Joo, Young-Chang .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

[35] Partial Melting and Structural Disorder in Models of Irradiated Amorphous Ge2Sb2Te5 [J].

Mocanu, Felix C. ;

Elliott, Stephen R. ;

Konstantinou, Konstantinos .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2025, 19 (07)

[36] Amorphous structure melt-quenched from defective Ge2Sb2Te5 [J].

Sun, Zhimei .

JOURNAL OF MATERIALS SCIENCE, 2012, 47 (21) :7635-7641

[37] Notes on Reproducibility of Ge2Sb2Te5 Properties [J].

Tanaka, Keiji .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (06)

[38] Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material [J].

Singh, Gurinder ;

Kaura, Aman ;

Mukul, Monika ;

Singh, Janpreet ;

Tripathi, S. K. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 117 (03) :1307-1314

[39] A comparison of Ge, Sb and Te thermal diffusion through Ge2Sb2Te5 [J].

Luong, Minh Anh ;

Ran, Sijia ;

Sabbione, Chiara ;

Claverie, Alain .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 164

[40] Crystallization of Ge2Sb2Te5 films by amplified femtosecond optical pulses [J].

Liu, Y. ;

Aziz, M. M. ;

Shalini, A. ;

Wright, C. D. ;

Hicken, R. J. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (12)

← 1 2 3 4 5 →