Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation

被引：12

作者：

Carria, E. ^{[1
,2
]}

Mio, A. M. ^{[1
]}

Gibilisco, S. ^{[1
,2
]}

Miritello, M. ^{[2
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,3
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] CNR, MATIS IMM, I-95123 Catania, Italy

[3] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

关键词：

PHASE-CHANGE MATERIALS; THIN-FILMS; RESISTANCE MEASUREMENTS; TRANSITION; MEMORY;

D O I：

10.1149/1.3527941

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amorphous to crystal transition temperature has been measured in capped (10 nm SiO2) and uncapped Ge2Sb2Te5 (GST) films (20 nm thick) after irradiation with a 40 keV Ge+ in the range between 5 x 10(13) and 1 x 10(15) ions/cm(2). In the capped samples the crystallization temperature increases with fluence (15 degrees C at 1 x 10(15) ions/cm(2)). This effect is due to the doping of the GST layer with a few atom percent of recoiled O and Si atoms. The influence of the chemical species on the crystallization kinetics overcomes the effect of the ion-induced local rearrangement that instead decreases the transition temperature by a few degrees in the uncapped samples. Recoil implantation through the use of a thin capping layer may then be a viable alternative to the direct doping of chalcogenide thin films. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3527941] All rights reserved.

引用

页码：H124 / H127

页数：4

共 50 条

[21] The crystallization behavior of amorphous Ge2Sb2Te5 films induced by a multi-pulsed nanosecond laser [J].

Fan, T. ;

Liu, F. R. ;

Li, W. Q. ;

Guo, J. C. ;

Wang, Y. H. ;

Sun, N. X. ;

Liu, F. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (09)

[22] A study on the crystallization behavior of Sn-doped amorphous Ge2Sb2Te5 by ultraviolet laser radiation [J].

Bai, N. ;

Liu, F. R. ;

Han, X. X. ;

Zhu, Z. ;

Liu, F. ;

Lin, X. ;

Sun, N. X. .

APPLIED SURFACE SCIENCE, 2014, 316 :202-206

[23] Polymorphism of Amorphous Ge2Sb2Te5 Probed by EXAFS and Raman Spectroscopy [J].

Carria, E. ;

Mio, A. M. ;

Gibilisco, S. ;

Miritello, M. ;

d'Acapito, F. ;

Grimaldi, M. G. ;

Rimini, E. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (12) :H480-H482

[24] Tellurium self-diffusion in amorphous Ge2Sb2Te5 phase change materials [J].

Gong, Qingmei ;

Jiang, Haihong ;

Perrin-Toinin, Jacques ;

Peterlechner, Martin ;

Putero, Magali ;

Portavoce, Alain ;

Divinski, Sergiy ;

Wilde, Gerhard .

ACTA MATERIALIA, 2023, 257

[25] Metastable Stacking-Polymorphism in Ge2Sb2Te5 [J].

He, Shixiong ;

Zhu, Linggang ;

Zhou, Jian ;

Sun, Zhimei .

INORGANIC CHEMISTRY, 2017, 56 (19) :11990-11997

[26] Crystallization process of in situ annealed Ge2Sb2Te5 films [J].

Zhang, Lei ;

Han, Xiaodong ;

Zhang, Ze .

JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 537 :71-75

[27] Crystallization dynamics of nitrogen-doped Ge2Sb2Te5 [J].

Shelby, Robert M. ;

Raoux, Simone .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)

[28] Effect of Doped Nitrogen on the Crystallization Behaviors of Ge2Sb2Te5 [J].

Yang, Inseok ;

Do, Kihoon ;

Chang, Hyun-Jin ;

Ko, Dae-Hong ;

Sohn, Hyunchul .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (04) :H483-H486

[29] Density of amorphous sputtered Ge2Sb2Te5 thin films [J].

Zhang, Q. ;

Lian, C. ;

Xu, Q. ;

Yu, Y. ;

Skowronski, M. .

AIP ADVANCES, 2023, 13 (01)

[30] A microscopic model for resistance drift in amorphous Ge2Sb2Te5 [J].

Im, Jino ;

Cho, Eunae ;

Kim, Dohyung ;

Horii, Hideki ;

Ihm, Jisoon ;

Han, Seungwu .

CURRENT APPLIED PHYSICS, 2011, 11 (02) :E82-E84

← 1 2 3 4 5 →