Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation

被引：12

作者：

Carria, E. ^{[1
,2
]}

Mio, A. M. ^{[1
]}

Gibilisco, S. ^{[1
,2
]}

Miritello, M. ^{[2
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,3
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] CNR, MATIS IMM, I-95123 Catania, Italy

[3] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

关键词：

PHASE-CHANGE MATERIALS; THIN-FILMS; RESISTANCE MEASUREMENTS; TRANSITION; MEMORY;

D O I：

10.1149/1.3527941

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amorphous to crystal transition temperature has been measured in capped (10 nm SiO2) and uncapped Ge2Sb2Te5 (GST) films (20 nm thick) after irradiation with a 40 keV Ge+ in the range between 5 x 10(13) and 1 x 10(15) ions/cm(2). In the capped samples the crystallization temperature increases with fluence (15 degrees C at 1 x 10(15) ions/cm(2)). This effect is due to the doping of the GST layer with a few atom percent of recoiled O and Si atoms. The influence of the chemical species on the crystallization kinetics overcomes the effect of the ion-induced local rearrangement that instead decreases the transition temperature by a few degrees in the uncapped samples. Recoil implantation through the use of a thin capping layer may then be a viable alternative to the direct doping of chalcogenide thin films. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3527941] All rights reserved.

引用

页码：H124 / H127

页数：4

共 23 条

[11] Study of oxygen-doped GeSbTe film and its effect as an interface layer on the recording properties in the blue wavelength [J].

Jeong, TH ;

Seo, H ;

Lee, KL ;

Choi, SM ;

Kim, SJ ;

Kim, SY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3B) :1609-1612

[12] Crystal morphology and nucleation in thin films of amorphous Te alloys used for phase change recording [J].

Kalb, JA ;

Wen, CY ;

Spaepen, F ;

Dieker, H ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

[13] Nitrogen doping effect on phase change optical disks [J].

Kojima, R ;

Okabayashi, S ;

Kashihara, T ;

Horai, K ;

Matsunaga, T ;

Ohno, E ;

Yamada, N ;

Ohta, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4B) :2098-2103

[14] Calculation of the surface binding energy for ion sputtered particles [J].

Kudriavtsev, Y ;

Villegas, A ;

Godines, A ;

Asomoza, R .

APPLIED SURFACE SCIENCE, 2005, 239 (3-4) :273-278

[15] TRIDYN - A TRIM SIMULATION CODE INCLUDING DYNAMIC COMPOSITION CHANGES [J].

MOLLER, W ;

ECKSTEIN, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) :814-818

[16] Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements [J].

Privitera, S ;

Rimini, E ;

Zonca, R .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3044-3046

[17] Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films [J].

Privitera, S. ;

Rimini, E. ;

Bongiorno, C. ;

Pirovano, A. ;

Bez, R. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 :352-354

[18]

Raoux S., 2010, MATER RES SOC S P, V1251

[19] Crystallization of sputtered-deposited and ion implanted amorphous Ge2Sb2Te5 thin films [J].

Rimini, E. ;

De Bastiani, R. ;

Carria, E. ;

Grimaldi, M. G. ;

Nicotra, G. ;

Bongiorno, C. ;

Spinella, C. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)

[20] Influence of doping upon the phase change characteristics of Ge2Sb2Te5 [J].

Wang, K. ;

Steitner, C. ;

Warnwangi, D. ;

Ziegler, S. ;

Wuttig, M. ;

Tomforde, J. ;

Bensch, W. .

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2007, 13 (02) :203-206

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