Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation

被引：12

作者：

Carria, E. ^{[1
,2
]}

Mio, A. M. ^{[1
]}

Gibilisco, S. ^{[1
,2
]}

Miritello, M. ^{[2
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,3
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] CNR, MATIS IMM, I-95123 Catania, Italy

[3] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

关键词：

PHASE-CHANGE MATERIALS; THIN-FILMS; RESISTANCE MEASUREMENTS; TRANSITION; MEMORY;

D O I：

10.1149/1.3527941

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amorphous to crystal transition temperature has been measured in capped (10 nm SiO2) and uncapped Ge2Sb2Te5 (GST) films (20 nm thick) after irradiation with a 40 keV Ge+ in the range between 5 x 10(13) and 1 x 10(15) ions/cm(2). In the capped samples the crystallization temperature increases with fluence (15 degrees C at 1 x 10(15) ions/cm(2)). This effect is due to the doping of the GST layer with a few atom percent of recoiled O and Si atoms. The influence of the chemical species on the crystallization kinetics overcomes the effect of the ion-induced local rearrangement that instead decreases the transition temperature by a few degrees in the uncapped samples. Recoil implantation through the use of a thin capping layer may then be a viable alternative to the direct doping of chalcogenide thin films. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3527941] All rights reserved.

引用

页码：H124 / H127

页数：4

共 23 条

[1] Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials [J].

Andrikopoulos, K. S. ;

Yannopoulos, S. N. ;

Kolobov, A. V. ;

Fons, P. ;

Tominaga, J. .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) :1074-1078

[2]

[Anonymous], 1997, CRC HDB CHEM PHYS

[3] Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials [J].

Caravati, S. ;

Bernasconi, M. ;

K hne, T. D. ;

Krack, M. ;

Parrinello, M. .

APPLIED PHYSICS LETTERS, 2007, 91 (17)

[4] Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films [J].

Carria, E. ;

Mio, A. M. ;

Miritello, M. ;

Gibilisco, S. ;

De Bastiani, R. ;

Pennisi, A. R. ;

Bongiorno, C. ;

Grimaldi, M. G. ;

Rimini, E. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (09) :II317-II320

[5] The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5 [J].

Cheng, Huai-Yu ;

Raoux, Simone ;

Chen, Yi-Chou .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)

[6] Amorphization kinetics of Ge2Sb2Te5 thin film induced by ion implantation [J].

De Bastiani, R. ;

Piro, A. M. ;

Grimaldi, M. G. ;

Rimini, E. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (572-576) :572-576

[7] Ion-irradiation-induced selective bond rearrangements in amorphous GeTe thin films [J].

De Bastiani, R. ;

Carria, E. ;

Gibilisco, S. ;

Grimaldi, M. G. ;

Pennisi, A. R. ;

Gotti, A. ;

Pirovano, A. ;

Bez, R. ;

Rimini, E. .

PHYSICAL REVIEW B, 2009, 80 (24)

[8] Ion irradiation-induced local structural changes in amorphous Ge2Sb2Te5 thin film [J].

De Bastiani, R. ;

Piro, A. M. ;

Grimaldi, M. G. ;

Rimini, E. ;

Baratta, G. A. ;

Strazzulla, G. .

APPLIED PHYSICS LETTERS, 2008, 92 (24)

[9] Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory [J].

Feng, J. ;

Zhang, Y. ;

Qiao, B. W. ;

Lai, Y. F. ;

Lin, Y. Y. ;

Cai, B. C. ;

Tang, T. A. ;

Chen, B. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 87 (01) :57-62

[10] Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements [J].

Friedrich, I ;

Weidenhof, V ;

Njoroge, W ;

Franz, P ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4130-4134

← 1 2 3 →