Manufacture of magnetic granular structures in semiconductor-ferromagnet systems

被引：46

作者：

Marenkin, S. F. ^{[1
,2
]}

Izotov, A. D. ^{[1
]}

Fedorchenko, I. V. ^{[1
]}

Novotortsev, V. M. ^{[1
]}

机构：

[1] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

[2] Natl Res & Technol Inst, Moscow, Russia

来源：

RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2015年 / 60卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; DOPED INSB; CHALCOPYRITES; MAGNETORESISTANCE; ALLOYS;

D O I：

10.1134/S0036023615030146

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The requirements are formulated to be fulfilled by magnetic granular structures that have the giant magnetoresistance (GMR) in semiconductor-ferromagnet systems. A(II)B(IV)C (2) (V) -Mn(C-V), A(III)C(V)-Mn(C-V), and A (3) (II) C (2) (V) -Mn(C-V) semiconductor-ferromagnet systems are shown to be eutectic systems and to be promising for the preparation of granular structures with high magnetoresistance values. Magnetic granular structures have been prepared in Zn(Cd)GeAs2-MnP(As), Zn(Cd)(3)P(As)(2)-MnP(As), and (Al,Ga,In)Sb-MnSb systems and the origin of magnetoresistance in these systems is shown to be due to the structure of Mn(C-V) ferromagnet clusters.

引用

页码：295 / 300

页数：6

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