Metallic state in a strongly interacting spinless two-valley electron system in two dimensions

被引：10

作者：

Melnikov, M. Yu ^{[1
]}

Shashkin, A. A. ^{[1
]}

Dolgopolov, V. T. ^{[1
]}

Huang, S-H ^{[2
,3
,4
]}

Liu, C. W. ^{[2
,3
,4
]}

Zhu, Amy Y. X. ^{[5
]}

Kravchenko, S., V ^{[5
]}

机构：

[1] Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[4] Natl Nano Device Labs, Hsinchu 300, Taiwan

[5] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

来源：

PHYSICAL REVIEW B | 2020年 / 101卷 / 04期

基金：

美国国家科学基金会;

关键词：

SI INVERSION-LAYERS; INSULATOR-TRANSITION; PHASE-DIAGRAM; HALL; CONDUCTIVITY; COLLOQUIUM; TRANSPORT;

D O I：

10.1103/PhysRevB.101.045302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless." It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior.

引用

页数：5

共 49 条

[21] Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells [J].

Melnikov, M. Yu. ;

Dolgopolov, V. T. ;

Shashkin, A. A. ;

Huang, S. -H. ;

Liu, C. W. ;

Kravchenko, S. V. .

JOURNAL OF APPLIED PHYSICS, 2017, 122 (22)

[22] Indication of band flattening at the Fermi level in a strongly correlated electron system [J].

Melnikov, M. Yu. ;

Shashkin, A. A. ;

Dolgopolov, V. T. ;

Huang, S-H. ;

Liu, C. W. ;

Kravchenko, S. V. .

SCIENTIFIC REPORTS, 2017, 7

[23] Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well [J].

Melnikov, M. Yu. ;

Shashkin, A. A. ;

Dolgopolov, V. T. ;

Huang, S. -H. ;

Liu, C. W. ;

Kravchenko, S. V. .

APPLIED PHYSICS LETTERS, 2015, 106 (09)

[24] Critical Behavior of a Strongly Interacting 2D Electron System [J].

Mokashi, A. ;

Li, S. ;

Wen, B. ;

Kravchenko, S. V. ;

Shashkin, A. A. ;

Dolgopolov, V. T. ;

Sarachik, M. P. .

PHYSICAL REVIEW LETTERS, 2012, 109 (09)

[25] Spin degree of freedom in a two-dimensional electron liquid [J].

Okamoto, T ;

Hosoya, K ;

Kawaji, S ;

Yagi, A .

PHYSICAL REVIEW LETTERS, 1999, 82 (19) :3875-3878

[26] CONDUCTIVITY-PEAK BROADENING IN THE QUANTUM HALL REGIME [J].

POLYAKOV, DG ;

SHKLOVSKII, BI .

PHYSICAL REVIEW B, 1993, 48 (15) :11167-11175

[27] Metal-insulator transitions and related phenomena in a strongly correlated two-dimensional electron system [J].

Pudalov, V. M. .

PHYSICS-USPEKHI, 2006, 49 (02) :203-208

[28] Instability of the two-dimensional metallic phase to a parallel magnetic field [J].

Pudalov, VM ;

Brunthaler, G ;

Prinz, A ;

Bauer, G .

JETP LETTERS, 1997, 65 (12) :932-937

[29] Metal-insulator transition in disordered two-dimensional electron systems [J].

Punnoose, A ;

Finkel'stein, AM .

SCIENCE, 2005, 310 (5746) :289-291

[30] Dilute electron gas near the metal-insulator transition: Role of valleys in silicon inversion layers [J].

Punnoose, A ;

Finkel'stein, AM .

PHYSICAL REVIEW LETTERS, 2002, 88 (01) :4-168024

← 1 2 3 4 5 →