Excess noise caused by transverse inhomogeneity of conductive channels

被引：3

作者：

Bulashenko, OM

Rubi, JM

Kochelap, VA

机构：

[1] Univ Barcelona, Dept Fis Fonamental, E-08028 Barcelona, Spain

[2] Univ Carlos III Madrid, Escuela Politecn Super, E-28911 Leganes, Spain

[3] Inst Semicond Phys, Dept Theoret Phys, UA-252028 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 02期

关键词：

D O I：

10.1063/1.121760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A type of excess noise which emerges in transversely inhomogeneous conductive channels is described. Its origin is traced back to the diffusion of the electric-field and carrier-density fluctuations across the channel. By making use of a WKB analysis, explicit analytical formulas for the current-noise spectrum are obtained. It is argued, that this type of noise should be manifested in a variety of currently used semiconductor devices. (C) 1998 American Institute of Physics. [S0003-6951(98)01628-3].

引用

页码：217 / 219

页数：3

共 11 条

[1]

BENDER CM, 1978, ADV MATH METHODS SCI, pCH10

[2] Spatial correlations across n(+)n semiconductor junctions [J].