Composition of the "GaAs" quantum dot, grown by droplet epitaxy

被引：17

作者：

Nemcsics, A. ^{[1
,2
]}

Toth, L. ^{[2
]}

Dobos, L. ^{[2
]}

Heyn, Ch ^{[3
,4
]}

Stemmann, A. ^{[3
,4
]}

Schramm, A. ^{[3
,4
]}

Welsch, H. ^{[3
,4
]}

Hansen, W. ^{[3
,4
]}

机构：

[1] Inst Microelect & Technol, H-1084 Budapest, Hungary

[2] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[3] Inst Angew Phys, D-20355 Hamburg, Germany

[4] Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2010年 / 48卷 / 04期

关键词：

MBE; GaAs; Droplet epitaxy; Quantum dot (QD); Transmission electron microscopy (TEM); Composition map; INGAAS;

D O I：

10.1016/j.spmi.2010.07.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Self-assembled strain-free quantum dot (QD) structures were grown on AlGaAs surface by the droplet epitaxal method. The QDs were developed from pure Ga droplets under As pressure. The QDs were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Both techniques show that the QDs are very uniform in size and their distribution on the surface is also homogeneous. The high resolution cross-sectional TEM investigation shows perfect lattice matching between the QD and the substrate, and also the faceting of the side walls of QD can be identified exactly by lattice planes. Analytical TEM (elemental mapping by EELS) unambiguously identifies the presence of Al in the QD. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：351 / 357

页数：7

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