Spectral photosensitivity of a-SiGe:H/c-Si heterostructures

被引：2

作者：

Sherchenkov, AA ^{[1
]}

机构：

[1] Technol Univ Moscow, Moscow Inst Elect Engn, Moscow 124498, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 07期

关键词：

Magnetic Material; Germanium; Electromagnetism; Spectral Position; High Photosensitivity;

D O I：

10.1134/1.1592846

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Characteristics of a-SiGe:H/c-Si heterostructures produced by rapid plasma-chemical low-frequency (55 kHz) deposition are studied. High photosensitivity of a-SiGe:H films is established. The spectral position of the maximum of photosensitivity of a a-SiGe:H/c-Si heterostructure can be varied from 830 to 920 nm by increasing the content of germanium in an a-SiGe:H alloy and decreasing its band gap. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：763 / 765

页数：3