Application of Monte Carlo method to GaAs photoconductive semiconductor switches

被引：0
|
作者：
Shi, W [1 ]
Dai, HY [1 ]
Gu, ML [1 ]
Qu, GH [1 ]
Ma, DM [1 ]
机构：
[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China
来源：
OPTOELECTRONIC DEVICES AND INTEGRATION, PTS 1 AND 2 | 2005年 / 5644卷
关键词：
photoconductive switch; Monte-Carlo; space-charge field;
D O I：
10.1117/12.577810
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monte-Carlo method is adopted in GaAs PCSS's simulation, In the case of high optical fluence, space-charge field can intensity influence the movement of the carrier. Thus, space-charge field can intensity influence not only the shape of photo-electric current of PCSS's, but also the terahertz out put of photo-conducting antenna. In this paper, the forming and movement of space-charge field are simulated by means of Monte-Carlo method. And the result of simulate indicates that optically activated charge multi-domain exists in photoconductor. The forming of multi-domain is also explained in this paper.
引用
收藏
页码：739 / 742
页数：4
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