Generation of multi-frequency radiation in pulsed microchip laser with Raman conversion

被引：5

作者：

Shpak, P. V. ^{[1
]}

Demidovich, A. A. ^{[2
]}

Danailov, M. B. ^{[2
]}

Grabtchikov, A. S. ^{[1
]}

Vatnik, S. M. ^{[3
]}

Hung, N. D. ^{[4
]}

Bagaev, S. N. ^{[3
]}

Orlovich, V. A. ^{[1
]}

机构：

[1] NAS Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS

[2] Laser Lab Sincrotrone Trieste, I-34012 Trieste, Italy

[3] SB RAS, Inst Laser Phys, Novosibirsk 630090, Russia

[4] VAST, Inst Phys, Ctr Quantum Elect, Hanoi, Vietnam

来源：

LASER PHYSICS LETTERS | 2010年 / 7卷 / 08期

关键词：

microchip laser; Raman conversion; harmonic generation;

D O I：

10.1002/lapl.201010022

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The generation process in an end-diode-pumped microchip Nd: YAG/Cr:YAG laser with intracavity Raman conversion in barium nitrate crystal and with additional intracavity nonlinear conversion by harmonic generation and sum-mixing was studied. The generation at fundamental (1064 nm) and Stokes (1197 nm) wavelengths in the near-infrared range and at three wavelengths (532.0, 598.7, and 563.4 nm) in the visible range has been obtained. The pulse energy in the visible range reached 0.2 - 0.4 mu J, which corresponds to an average power of several miliwatts at a pulse repetition rate of up to 17 kHz. The pulse widths were less than 1 ns.

引用

页码：555 / 559

页数：5

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