Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT

被引：37
作者：
Narang, Kapil [1 ,2 ]
Bag, Rajesh K. [1 ]
Singh, Vikash K. [1 ]
Pandey, Akhilesh [1 ]
Saini, Sachin K. [1 ]
Khan, Ruby [1 ]
Arora, Aman [1 ]
Padmavati, M. V. G. [1 ]
Tyagi, Renu [1 ]
Singh, Rajendra [2 ]
机构：
[1] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India
[2] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2020年 / 815卷
关键词：
AlGaN; V/III molar ratio; Surface morphology; 2DEG; CHEMICAL-VAPOR-DEPOSITION; GROWTH-RATE; PERFORMANCE; CARBON; STATES; LAYER; HETEROSTRUCTURES; GANHEMTS; DEFECTS; IMPACT;
D O I：
10.1016/j.jallcom.2019.152283
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
AlGaN/GaN high electron mobility transistor (HEMT) epi-structures were grown on SiC substrate using MOVPE. In this paper, the growth of high-quality AlGaN epi-layer in AlGaN/GaN HEMT is reported. The optimization was carried out to improve surface morphology and quality of the AlGaN epi-layer to get high 2DEG (two-dimensional electron gas) properties of the HEMT structure. For this optimization, AlGaN epi-layers were grown with different Will molar ratio. It was found that both lower and higher V/III molar ratios result in the step flow surface morphology of AlGaN. However, a higher Will molar ratio results in reduced surface roughness, improved quality of AlGaN, and excellent 2DEG properties of HEMT epi-structure. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页数：6
相关论文
共 38 条
[1]   Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].
Ambacher, O ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Wittmer, L ;
Stutzmann, M ;
Rieger, W ;
Hilsenbeck, J .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233
[2]   Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition [J].
Armstrong, A ;
Arehart, AR ;
Moran, B ;
DenBaars, SP ;
Mishra, UK ;
Speck, JS ;
Ringel, SA .
APPLIED PHYSICS LETTERS, 2004, 84 (03) :374-376
[3]   Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes [J].
Demchenko, D. O. ;
Diallo, I. C. ;
Reshchikov, M. A. .
PHYSICAL REVIEW LETTERS, 2013, 110 (08)
[4]   Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices [J].
Gamarra, Piero ;
Lacam, Cedric ;
Tordjman, Maurice ;
Splettstoesser, Joerg ;
Schauwecker, Bernd ;
di Forte-Poisson, Marie-Antoinette .
JOURNAL OF CRYSTAL GROWTH, 2015, 414 :232-236
[5]   Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates [J].
Gaska, R ;
Yang, JW ;
Osinsky, A ;
Chen, Q ;
Khan, MA ;
Orlov, AO ;
Snider, GL ;
Shur, MS .
APPLIED PHYSICS LETTERS, 1998, 72 (06) :707-709
[6]   Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability [J].
Green, DS ;
Gibb, SR ;
Hosse, B ;
Vetury, R ;
Grider, DE ;
Smart, JA .
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :285-292
[7]   Effect of growth conditions on the Al composition and quality of AlGaN film [J].
Huang, G. S. ;
Yao, H. H. ;
Kuo, H. C. ;
Wang, S. C. .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 136 (01) :29-32
[8]   Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy [J].
Hussein, A. S. H. ;
Hassan, Z. ;
Thahab, S. M. ;
Ng, S. S. ;
Abu Hassan, H. ;
Chin, C. W. .
APPLIED SURFACE SCIENCE, 2011, 257 (09) :4159-4164
[9]   Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors [J].
Ibbetson, JP ;
Fini, PT ;
Ness, KD ;
DenBaars, SP ;
Speck, JS ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 2000, 77 (02) :250-252
[10]   Structural and optical characterization of AlGaN/GaN layers [J].
Jayasakthi, M. ;
Ramesh, R. ;
Arivazhagan, P. ;
Loganathan, R. ;
Prabakaran, K. ;
Balaji, M. ;
Baskar, K. .
JOURNAL OF CRYSTAL GROWTH, 2014, 401 :527-531
1234