Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator

被引：18

作者：

Choi, Hyung-Wook ^{[1
]}

Hong, Beom-Joo ^{[1
]}

Lee, Seung-Kyu ^{[1
]}

Kim, Kyung-Hwan ^{[1
]}

Park, Yong-Seo ^{[1
]}

机构：

[1] Kyungwon Univ, Dept Elect & Informat Engn, Songnam 461701, Gyeonggi Do, South Korea

来源：

JOURNAL OF LUMINESCENCE | 2007年 / 126卷 / 02期

关键词：

ZnGa2O4; thin film; RF magnetron sputter; Cathodoluminescence(CL);

D O I：

10.1016/j.jlumin.2006.08.075

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The zincgallate (ZnGa2O4) phosphor thin film was grown using RF magnetron sputtering system at various process parameters. A ZnGa2O4 phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor (RTP). The X-ray diffractometer (XRD) patterns indicate that the Mn-doped ZnGa2O4 phosphor thin film shows a (31 1) main peak and a spinel phase. A ZnGa2O4 phosphor thin film has better crystallization due to increased substrate, annealing temperature and deposition time. Also the ZnGa2O4:Mn phosphor thin film shows green emission (510 nm, T-4(1) -> (6)A(1)), and the ZnGa2O4:Cr phosphor thin film shows red emission (705 nm, (4)A(2) -> T-4(2)). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：359 / 364

页数：6

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