Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator

被引：18
|
作者：
Choi, Hyung-Wook [1 ]
Hong, Beom-Joo [1 ]
Lee, Seung-Kyu [1 ]
Kim, Kyung-Hwan [1 ]
Park, Yong-Seo [1 ]
机构：
[1] Kyungwon Univ, Dept Elect & Informat Engn, Songnam 461701, Gyeonggi Do, South Korea
来源：
JOURNAL OF LUMINESCENCE | 2007年 / 126卷 / 02期
关键词：
ZnGa2O4; thin film; RF magnetron sputter; Cathodoluminescence(CL);
D O I：
10.1016/j.jlumin.2006.08.075
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The zincgallate (ZnGa2O4) phosphor thin film was grown using RF magnetron sputtering system at various process parameters. A ZnGa2O4 phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor (RTP). The X-ray diffractometer (XRD) patterns indicate that the Mn-doped ZnGa2O4 phosphor thin film shows a (31 1) main peak and a spinel phase. A ZnGa2O4 phosphor thin film has better crystallization due to increased substrate, annealing temperature and deposition time. Also the ZnGa2O4:Mn phosphor thin film shows green emission (510 nm, T-4(1) -> (6)A(1)), and the ZnGa2O4:Cr phosphor thin film shows red emission (705 nm, (4)A(2) -> T-4(2)). (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：359 / 364
页数：6
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