Heteroepitaxial Growth of Ge Nanowires on Si Substrates

被引：2

作者：

Artoni, Pietro ^{[1
,2
]}

Irrera, Alessia ^{[1
]}

Pecora, Emanuele Francesco ^{[1
,2
]}

Boninelli, Simona ^{[1
]}

Spinella, Corrado ^{[3
]}

Priolo, Francesco ^{[1
,2
]}

机构：

[1] MATIS IMM CNR, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] IMM CNR, I-95121 Catania, Italy

来源：

INTERNATIONAL JOURNAL OF PHOTOENERGY | 2012年 / 2012卷

关键词：

EPITAXY; SHAPE;

D O I：

10.1155/2012/782835

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]). NWs are faceted, exhibiting the lower energy plans on the surface. The faceting depends on the growth direction. Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed. Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained.

引用

页数：5

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