Edge Bonding Void Free Low Temperature Oxide-Oxide Direct Bonding Process

被引：2

作者：

Castex, A. ^{[1
]}

Broekaart, M. ^{[1
]}

Thieffry, S. ^{[1
]}

Landry, K. ^{[1
]}

Fontaniere, R. ^{[1
]}

Lagahe, C. ^{[1
]}

机构：

[1] SOITEC, F-38926 Bernin, Crolles, France

来源：

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS | 2011年 / 35卷 / 02期

关键词：

D O I：

10.1149/1.3568856

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper presents a new wafer bonding process used for back side illuminated (BSI) image sensors manufacturing, with high bonding energy of 2 J/m(2), without peripheral edge bonding voids that occur with the standard process.

引用

页码：145 / 151

页数：7

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