Czochralski growth of GeSi bulk alloy crystals

被引：44

作者：

Yonenaga, I ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 198卷

关键词：

GeSi; Czochralski growth; solute segregation; gravity effect; hetero-seeding;

D O I：

10.1016/S0022-0248(98)00992-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Bulk crystals of Ge1-xSix alloys of the composition range 0 < x < 1 were grown by the Czochralski method with the pulling rate 0.5-8 mm/h. Fully grown single crystals of large size were obtained with composition x < 0.15 and x > 0.85. Crystals with intermediate composition changed to polycrystalline due to the constitutional supercooling. The hetero-seeding process by using an Si or Ge crystal was investigated in terms of solute segregation. By infra-red spectroscopy, a large number of oxygen atoms were deduced to be included in the grown alloys. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：404 / 408

页数：5

共 14 条

[1] Single crystal growth of Si1-xGex by the Czochralski technique [J].