Monte Carlo simulation of electron mobility in double gate SOI-MOSFETs.

被引：0

作者：

Gamiz, F

Roldan, JB

LopezVillanueva, JA

Carceller, JE

机构：

来源：

PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1997年 / 97卷 / 23期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the importance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruptly decreases due to stronger phonon scattering.

引用

页码：233 / 238

页数：6