机构:
Natl Semicond Corp, Santa Clara, CA USANatl Semicond Corp, Santa Clara, CA USA
Vashchenko, V. A.
[1
]
LaFonteese, D.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Semicond Corp, Santa Clara, CA USANatl Semicond Corp, Santa Clara, CA USA
LaFonteese, D.
[1
]
Concannon, A.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Semicond Corp, Santa Clara, CA USANatl Semicond Corp, Santa Clara, CA USA
Concannon, A.
[1
]
机构:
[1] Natl Semicond Corp, Santa Clara, CA USA
来源:
2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
|
2011年
关键词:
ESD;
latchup;
TLP;
power;
analog;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Two cases of transient latchup specific to power management analog integrated circuit design are described and analyzed experimentally. The representative case studies include the interaction of a power array and ESD clamp and the interaction of two high voltage ESD clamps