Synergistic effect of polymer encapsulated silver nanoparticle doped WS2 sheets for plasmon enhanced 2D/3D heterojunction photodetectors

被引:28
|
作者
Chowdhury, R. K. [1 ]
Sinha, T. K. [1 ]
Katiyar, A. K. [1 ]
Ray, S. K. [1 ,2 ]
机构
[1] Indian Inst Technol, Dept Phys, Kharagpur 721303, W Bengal, India
[2] SN Bose Natl Ctr Basic Sci, Kolkata 700106, India
关键词
OPTOELECTRONIC DEVICES; HETEROSTRUCTURES; SEMICONDUCTORS; PHOTORESPONSE; DETECTIVITY; LAYERS; PVP;
D O I
10.1039/c7nr05974d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Chemical doping and plasmonic enhanced photoresponsivity of two dimensional ( 2D) n-WS2/p-Si heterojunctions are demonstrated for the first time. Novel PVP coated Ag-0 intercalation induced synthesis has led to the formation of impurity-free, chemically doped few-layer n-WS2 with reversed conductivity following the Maxwell-Wagner-Sillars interfacial effect. The resultant composite film exhibits excellent stability and tunable plasmonic absorption due to silver nanoparticles of different sizes. A sharp bandedge absorption of the hybrid material indicates the presence of spin-orbit coupled direct band gap transitions in WS2 layers, in addition to a broader plasmonic peak attributed to Ag nanoparticles. Stabilized Ag-nanoparticle (similar to 4-6 nm) embedded electron rich n-WS2 has been used to fabricate plasmon enhanced, silicon compatible heterojunction photodetectors. The detectors exhibited superior properties, possessing a photo-to-dark current ratio of similar to 10(3), a very high responsivity (8.0 A W-1) and an EQE of 2000% under 10 V bias with a broad spectral photoresponse in the wavelength range of 400-1100 nm. The results provide a new paradigm for intercalant impurity-free metal nanoparticle assisted exfoliation of n-type few-layer WS2, with the nanoparticles playing a dual role towards the realization of 2D materials based broadband heterojunction optoelectronic devices by inducing chemical doping as well as tunable plasmon enhanced absorption.
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页码:15591 / 15597
页数:7
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