Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

被引：25
作者：
Kirste, Ronny [1 ,2 ]
Sarkar, Biplab [1 ,3 ]
Reddy, Pramod [1 ,2 ]
Guo, Qiang [1 ]
Collazo, Ramon [1 ]
Sitar, Zlatko [1 ]
机构：
[1] North Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA
[2] Adroit Mat, Cary, NC USA
[3] Indian Inst Technol, Dept Elect & Commun Engn, Roorkee 247667, Uttarakhand, India
来源：
JOURNAL OF MATERIALS RESEARCH | 2021年 / 36卷 / 23期
基金：
美国国家科学基金会;
关键词：
Laser; Optoelectronic; Electrical properties; Optical properties; Dopant; RESONANCE RAMAN-SPECTROSCOPY; CONTINUOUS-WAVE OPERATION; BULK ALUMINUM NITRIDE; LIGHT-EMITTING-DIODES; MG-DOPED GAN; STIMULATED-EMISSION; OHMIC CONTACTS; ELECTRICAL-PROPERTIES; ALN/ALGAN SUPERLATTICES; ALN/SAPPHIRE TEMPLATES;
D O I：
10.1557/s43578-021-00443-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article, the development of mid-UV laser diodes based on the AlGaN materials system is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm. After introducing UV laser diodes and explaining their applications, the challenges in growth, design, and fabrication are discussed. In addition, recent results from optically and electrically injected UV laser diodes are presented. Finally, we will discuss possible pathways to improve performance and give an outlook on the expected development of UV laser diodes in the near future.
引用
收藏
页码：4638 / 4664
页数：27
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