ALD Barrier Deposition on Porous Low-k Dielectric Materials for Interconnects

被引：6

作者：

Van Elshocht, Sven ^{[1
]}

Delabie, Annelies ^{[1
]}

Dewilde, Sven ^{[1
]}

Meersschaut, Johan ^{[1
]}

Swerts, Johan ^{[1
]}

Tielens, Hilde ^{[1
]}

Verdonck, Patrick ^{[1
]}

Witters, Thomas ^{[1
]}

Vancoille, Eric ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 7 | 2011年 / 41卷 / 02期

关键词：

ATOMIC LAYER DEPOSITION; FILMS; NUCLEATION; CHEMISTRY; PLASMA;

D O I：

10.1149/1.3633651

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To achieve very low permittivity values, advanced generations of low-k dielectrics for interconnects have a porous structure. Precursor penetration during metal barrier deposition by atomic layer deposition needs to be avoided not to degrade the low-k material properties. In this paper, we compare various options to seal a highly porous low-k material with a k-value of 2.0 against penetration during TaN ALD. This includes the exploration of a higher deposition temperature, the use of additional sealing layers, and the introduction of a short PVD Ta flash exposure prior to ALD. Depending on the technique used, pore penetration can be quasi completely avoided.

引用

收藏

页码：25 / 32

页数：8

相关论文

共 22 条

[1]

ALESKOVSKII VB, 1974, J APPL CHEM-USSR+, V47, P2207

[2]

ALESKOVSKII VB, 1974, ZH PRIKL KHIM, V47, P2145

[3] Tuning the Composition and Nanostructure of Pt/Ir Films via Anodized Aluminum Oxide Templated Atomic Layer Deposition [J].

Comstock, David J. ;

Christensen, Steven T. ;

Elam, Jeffrey W. ;

Pellin, Michael J. ;

Hersam, Mark C. .

ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (18) :3099-3105

[4] Sealing porous low-k dielectrics with silica [J].

de Rouffignac, P ;

Li, ZW ;

Gordon, RG .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (12) :G306-G308

[5] Improved nucleation of TiN atomic layer deposition films on SILK low-k polymer dielectric using an Al2O3 atomic layer deposition adhesion layer [J].

Elam, JW ;

Wilson, CA ;

Schuisky, M ;

Sechrist, ZA ;

George, SM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03) :1099-1107

[6] Ta penetration into template-type porous low-k material during atomic layer deposition of TaN -: art. no. 094902 [J].

Furuya, A ;

Ohtsuka, N ;

Misawa, K ;

Shimada, M ;

Ogawa, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (09)

[7] Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane [J].

Furuya, A ;

Yoneda, K ;

Soda, E ;

Yoshie, T ;

Okamura, H ;

Shimada, M ;

Ohtsuka, N ;

Ogawa, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06) :2522-2525

[8] Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N) underlayers [J].

Green, ML ;

Ho, MY ;

Busch, B ;

Wilk, GD ;

Sorsch, T ;

Conard, T ;

Brijs, B ;

Vandervorst, W ;

Räisänen, PI ;

Muller, D ;

Bude, M ;

Grazul, J .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7168-7174

[9] The role of the methyl and hydroxyl groups of low-k dielectric films on the nucleation of ruthenium by ALD [J].

Heo, Jaeyeong ;

Won, Seok-Jun ;

Eom, Dail ;

Lee, Sang Young ;

Ahn, Young Bae ;

Hwang, Cheol Seong ;

Kim, Hyeong Joon .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (08) :H210-H213

[10] Sub-10 nm thick microporous membranes made by plasma-defined atomic layer deposition of a bridged silsesquioxane precursor [J].

Jiang, Ying-Bing ;

Xomeritakis, George ;

Chen, Zhu ;

Dunphy, Darren ;

Kissel, David J. ;

Cecchi, Joseph L. ;

Brinkertt, C. Jeffrey .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (50) :15446-+