Optoelectronic properties and color chemistry of native point defects in Al:ZnO transparent conductive oxide

被引:28
作者
Catellani, Alessandra [1 ,2 ]
Ruini, Alice [1 ,3 ]
Calzolari, Arrigo [1 ]
机构
[1] Ist Nanosci CNR NANO S3, I-41125 Modena, Italy
[2] CNR IMEM, I-43100 Parma, Italy
[3] Univ Modena & Reggio Emilia, Dipartimento Fis Informat & Matemat, I-41125 Modena, Italy
关键词
THIN-FILMS; OPTICAL-PROPERTIES; SOL-GEL; ZNO; TEMPERATURE; SURFACE;
D O I
10.1039/c5tc01699a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a first principles study on the effect of native point defects in Al:ZnO transparent conductive oxide. Our results indicate that oxygen and zinc vacancies play two completely different roles:the former maintain the electrical properties while worsening the transparency of native Al:ZnO. The latter are strong electron acceptors that can destroy the metal-like conductivity of the system. While the percentage of doping amount is not really relevant, the compensation ratio between Zn vacancies and Al dopants is crucial for the final electrical properties of the system. H impurities always act as electron donors and generally improve the characteristics of the transparent conductor. Finally, we show how the chemistry of the defects affects the color of Al:ZnO samples, in agreement with experimental results. Our results pave the way to defect engineering for the growth of high performance transparent conductive oxides.
引用
收藏
页码:8419 / 8424
页数:6
相关论文
共 45 条
[1]  
Aeschlimann M., 2004, ENCY NANOSCIENCE NAN
[2]   Optoelectronic properties of Al:ZnO: Critical dosage for an optimal transparent conductive oxide [J].
Bazzani, Mirco ;
Neroni, Andrea ;
Calzolari, Arrigo ;
Catellani, Alessandra .
APPLIED PHYSICS LETTERS, 2011, 98 (12)
[3]   Transparent Conductive Oxides as Near-IR Plasmonic Materials: The Case of Al-Doped ZnO Derivatives [J].
Calzolari, Arrigo ;
Ruini, Alice ;
Catellani, Alessandra .
ACS PHOTONICS, 2014, 1 (08) :703-709
[4]   Anchor Group versus Conjugation: Toward the Gap-State Engineering of Functionalized ZnO(10(1)over-bar0) Surface for Optoelectronic Applications [J].
Calzolari, Arrigo ;
Ruini, Alice ;
Catellani, Alessandra .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (15) :5893-5899
[5]  
Castaneda J. L., 2010, MAT SCI APPL, V2, P1233
[6]   Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition [J].
Chen, Yu-Yun ;
Hsu, Jin-Cherng ;
Wang, Paul W. ;
Pai, Yao-Wei ;
Wu, Chih-Yuan ;
Lin, Yung-Hsin .
APPLIED SURFACE SCIENCE, 2011, 257 (08) :3446-3450
[7]   Optical properties of emeraldine salt polymers from ab initio calculations: Comparison with recent experimental data [J].
Colle, Renato ;
Parruccini, Pietro ;
Benassi, Andrea ;
Cavazzoni, Carlo .
JOURNAL OF PHYSICAL CHEMISTRY B, 2007, 111 (11) :2800-2805
[8]   Non-injection Synthesis of Doped Zinc Oxide Plasmonic Nanocrystals [J].
Della Gaspera, Enrico ;
Chesman, Anthony S. R. ;
van Embden, Joel ;
Jasieniak, Jacek J. .
ACS NANO, 2014, 8 (09) :9154-9163
[9]  
Ellmer K, 2012, NAT PHOTONICS, V6, P808, DOI [10.1038/NPHOTON.2012.282, 10.1038/nphoton.2012.282]
[10]   First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects [J].
Erhart, Paul ;
Albe, Karsten ;
Klein, Andreas .
PHYSICAL REVIEW B, 2006, 73 (20)