Determination of EL2 capture and emission coefficients in semi-insulating n-GaAs

被引：13

作者：

Bonilla, LL ^{[1
]}

Hernando, PJ

Kindelan, M

Piazza, F

机构：

[1] Univ Carlos III Madrid, Escuela Politecn Super, Leganes 28911, Spain

[2] Univ Nijmegen, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands

[3] Univ Nijmegen, Mat Res Inst, NL-6525 ED Nijmegen, Netherlands

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.123432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have determined the capture and emission coefficients by EL2 traps in semi-insulating n-GaAs using available experimental results. To this end, we have derived a simplified mathematical model from the complete drift-diffusion equations by singular perturbation methods. The capture and emission coefficients are adjusted so that the numerically obtained steady-state and high-field charge dipole solutions of the simplified model match the available experimental results. (C) 1999 American Institute of Physics. [S0003-6951(99)02607-8].

引用

页码：988 / 990

页数：3

共 17 条

[1] CAPACITANCES IN SILICON MICROSTRIP DETECTORS [J].

BARBERIS, E ;

CARTIGLIA, N ;

LEVIER, C ;

RAHN, J ;

RINALDI, P ;

SADROZINSKI, HFW ;

WICHMANN, R ;

OHSUGI, T ;

UNNO, Y ;

MIYATA, H ;

TAMURA, N ;

YAMAMOTO, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 342 (01) :90-95

[2]

BERWICK K, 1993, I PHYS C PRO, V135, P305

[3]

Bonilla L. L., UNPUB

[4] THEORY OF PERIODIC AND SOLITARY SPACE-CHARGE WAVES IN EXTRINSIC SEMICONDUCTORS [J].

BONILLA, LL ;

TEITSWORTH, SW .

PHYSICA D, 1991, 50 (03) :545-559

[5] An extended drift-diffusion model of semi-insulating n-GaAs Schottky-barrier diodes [J].

Cola, A ;

Reggiani, L ;

Vasanelli, L .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (11) :1358-1364

[6] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[7] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J].

LANG, DV ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1975, 35 (22) :1525-1528

[8] PRESENT STATUS OF UNDOPED SEMIINSULATING LEC BULK GAAS AS A RADIATION SPECTROMETER [J].

MCGREGOR, DS ;

ROJESKI, RA ;

KNOLL, GF ;

TERRY, FL ;

EAST, J ;

EISEN, Y .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 343 (2-3) :527-538

[9] Electric field dependent EL2 capture coefficient in semi-insulating GaAs obtained from propagating high field domains [J].

Piazza, F ;

Christianen, PCM ;

Maan, JC .

APPLIED PHYSICS LETTERS, 1996, 69 (13) :1909-1911

[10] Propagating high-electric-field domains in semi-insulating GaAs: Experiment and theory [J].

Piazza, F ;

Christianen, PCM ;

Maan, JC .

PHYSICAL REVIEW B, 1997, 55 (23) :15591-15600

← 1 2 →