Mn induced ferromagnetism and modulated topological surface states in Bi2Te3

被引：71

作者：

Niu, Chengwang ^{[1
]}

Dai, Ying ^{[1
]}

Guo, Meng ^{[1
]}

Wei, Wei ^{[1
]}

Ma, Yandong ^{[1
]}

Huang, Baibiao ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期

基金：

中国国家自然科学基金;

关键词：

ab initio calculations; bismuth compounds; carrier density; ferromagnetic materials; magnetic moments; magnetisation; magnetoelectric effects; manganese; surface states; topological insulators; SINGLE DIRAC CONE; INSULATORS;

D O I：

10.1063/1.3601020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ferromagnetism and topological surface states manipulated by manganese in topological insulator Bi2Te3 are investigated by means of first-principles calculations. Our results indicate that substitution Mn for Bi can induce spin-polarized hole states with a total magnetic moments of 4.0 mu(B), and sufficient hole carrier density is required to obtain sustained magnetization. The obvious gap at the Dirac point coinciding with sharp surface state appears as Mn doped into Bi2Te3 because the magnetic interactions break the time reversal symmetry. The study paves a way to explore topological magnetoelectric effect and spintronic device applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601020]

引用

页数：3

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