Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation

被引：38
|
作者：
Fukumi, K
Chayahara, A
Ohora, K
Kitamura, N
Horino, Y
Fujii, K
Makihara, M
Hayakaya, J
Ohno, N
机构：
[1] AIST, Osaka Natl Res Inst, Osaka 5638577, Japan
[2] Osaka Electrocommun Univ, Fac Engn, Neyagawa, Osaka 572, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 149卷 / 1-2期
关键词：
photoluminescence; ion implantation; silica glass; copper;
D O I：
10.1016/S0168-583X(98)00729-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
2 MeV Cu+ ions were implanted in silica glass at doses from 1x10(15) to 1x10(17) ions/cm(2). Cu+-ion implanted silica glass followed by heat treatment showed photoluminescence due to monovalent copper ions. The photoluminescence intensity was the highest at a dose of 1x10(16) Cu+ ions/cm(2) in the present implantation condition. It was deduced that co-implantation of oxygen ions stabilizes the monovalent copper ions in silica glass. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：77 / 80
页数：4
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