Character of Interaction in the SnSb2Te4-SnBi2Te4 System and the Thermoelectric Properties of (SnSb2Te4)1-x(SnBi2Te4)x Solid Solutions

被引:1
作者
Gurbanov, G. R. [1 ]
Adygezalova, M. B. [1 ]
机构
[1] Azerbaijan State Univ Oil & Ind, AZ-1010 Baku, Azerbaijan
关键词
(SnSb2Te4)(1-)(x)(SnBi2Te4)(x) solid solutions; quaternary compounds; quasi-ternary system; state diagram; phase equilibrium; electrical conductivity; Seebeck coefficient; thermal conductivity; MECHANICAL-PROPERTIES; MELT SOLIDIFICATION; PSEUDOBINARY SYSTEMS; CRYSTAL-STRUCTURES; PHASE-RELATIONS; BISMUTH; GERMANIUM; TIN;
D O I
10.1134/S1063782621060063
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
For the first time, the character of the interaction of components along the cut of SnSb2Te4-SnBi2Te4 is studied by various physicochemical methods in a wide temperature range, and the phase diagrams are plotted. The cut is found to be a quasi-binary cross section of the SnTe-Sb2Te3-Bi2Te3 quasi-ternary system. The cut contains the quaternary compound SnSbBiTe4, which melts congruently at 900 K. Single crystals of the quaternary compound SnSbBiTe4 are obtained by the method of chemical transport reactions. X-ray analysis is used to determine the unit-cell parameters a = 4.356 angstrom and c = 41.531 angstrom of single crystals of the quaternary compounds. It is found that the compound crystallizes in the tetradymite lattice of rhombohedral syngony, space group R3m, the charge is z = 3, and the unit-cell volume is V = 682.43 angstrom(3). The thermoelectric parameters of (SnSb2Te4)(1 -)(x)(SnBi2Te4)(x) are measured in the temperature range of 300-600 K. It is found that the thermoelectric figure of merit increased with the SnBi2Te4 content in the solid solutions. The thermoelectric efficiency of (SnSb2Te4)(1 -)(x)(SnBi2Te4)(x) with x = 1.0 has a peak value of Z = 3.1 x 10(-3) K-1 at 300 K.
引用
收藏
页码:943 / 947
页数:5
相关论文
共 28 条
[1]  
Aakeröy CB, 2017, FARADAY DISCUSS, V203, P459, DOI [10.1039/c7fd90064c, 10.1039/C7FD90064C]
[2]  
Abrikosov I.Kh., 1975, SEMICONDUCTING CHALC
[3]  
Agaguseinova M.M., 2011, KHIM KHIM TEKHNOL, V5, P130
[4]  
Anatychuk L. I., 2000, THERMOELECTRICITY, V1
[5]  
Anatychuk L.I., 1979, Thermoelements and thermoelectric devices. Reference book
[6]   Manipulating the Topological Interface by Molecular Adsorbates: Adsorption of Co-Phthalocyanine on Bi2Se3 [J].
Caputo, Marco ;
Panighel, Mirko ;
Lisi, Simone ;
Khalil, Lama ;
Di Santo, Giovanni ;
Papalazarou, Evangelos ;
Hruban, Andrzej ;
Konczykowski, Marcin ;
Krusin-Elbaum, Lia ;
Aliev, Ziya S. ;
Babanly, Mahammad B. ;
Otrokov, Mikhail M. ;
Politano, Antonio ;
Chulkov, Evgueni V. ;
Arnau, Andres ;
Marinova, Vera ;
Das, Pranab K. ;
Fujii, Jun ;
Vobornik, Ivana ;
Perfetti, Luca ;
Mugarza, Aitor ;
Goldoni, Andrea ;
Marsi, Marino .
NANO LETTERS, 2016, 16 (06) :3409-3414
[7]   Reinvestigation of the thermoelectric properties of Ag8GeTe6 [J].
Charoenphakdee, Anek ;
Kurosaki, Ken ;
Muta, Hiroaki ;
Uno, Masayoshi ;
Yamanaka, Shinsuke .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (02) :65-67
[8]  
Gurbanov G.R., 2013, KHIM KHIM TEKHNOL, V56, P124
[9]  
Gurbanov G.R., 2011, KHIM KHIM TEKHNOL, V54, P66
[10]  
IOFFE AF, 1960, SEMICONDUCTOR THERMA