Silver Sinter Joining and Stress Migration Bonding for WBG Die-attach

被引：0

作者：

Suganuma, K. ^{[1
]}

Nagao, S. ^{[1
]}

Sugahara, T. ^{[1
]}

Yokoi, E. ^{[1
]}

Zhang, H. ^{[1
]}

Jiu, J. ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan

来源：

2016 INTERNATIONAL SYMPOSIUM ON 3D POWER ELECTRONICS INTEGRATION AND MANUFACTURING (3D-PEIM) | 2016年

关键词：

die-attach; sinter joining; Ag; Cu; interconnection; wide band gap; power electronics; LOW-TEMPERATURE; POWER DEVICES; PASTE; STABILITY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Power electronics play an important role in the generation-storage-distribution conversion cycle of the electric energy. Wide band gap semiconductors such as SiC and GaN have attracted many researchers recently because both of their excellent energy conversion efficiency and of capability of device downsizing. The performance of interconnection, especially die-attach, has one of the essential roles for achieving high performance. Among various proposals for die attach materials and processes, Ag sinter joining is a promising method for power semiconductors as well as for power LEDs, providing excellent heat-resistance to achieve stable joint structures beyond 200 degrees C. This paper summarizes the present status of the Ag sinter joining and of the new bonding approach with Ag films.

引用

页数：4

共 17 条

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