Hot-Carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA

被引：0

作者：

Ramos, J ^{[1
]}

Jeamsaksiri, W ^{[1
]}

Mercha, A ^{[1
]}

Thijs, S ^{[1
]}

Linten, D ^{[1
]}

Wambacq, P ^{[1
]}

De Jaeger, B ^{[1
]}

Debusschere, I ^{[1
]}

Biesemans, S ^{[1
]}

Decoutere, S ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier stress impact on the analogue/RF performances of a state-of-the-art 90nm RF-CMOS technology, demonstrated on RF-circuits operating up to 5Ghz, is shown for the first time in a 900MHz LNA biased in moderate inversion. The Trade-off between low-power consumption and lifetime is discussed, addressing limitations and pointing to possible solutions.

引用

页码：64 / 65

页数：2

共 39 条

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