Light scattering in p-type GaAs:Ge

被引:8
作者
MunozHernandez, RA [1 ]
JimenezSandoval, S [1 ]
TorresDelgado, G [1 ]
Roch, C [1 ]
Chen, XK [1 ]
Irwin, JC [1 ]
机构
[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY,BC V5A 1S6,CANADA
关键词
D O I
10.1063/1.363074
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present in this work the results of a Raman spectroscopy study on the plasmon-phonon coupling in Ge-doped p-type gallium arsenide. A series of polarized Raman scattering experiments were carried out on epitaxial films grown by liquid-phase epitaxy on (100) GaAs substrates at 20, 100, and 300 K. The films were p type with free hole densities varying in the range of 5x10(17)-1x10(20) cm(-3). Under the scattering configurations employed, the longitudinal optical (LO) mode is forbidden for crossed polarization while the transverse optical (TO) mode is forbidden for both pnr allel and crossed polarizations. However, all the polarized Raman spectra showed two peaks with frequencies close to the TO and LO phonons of semi-insulating GaAs. The appearance of such forbidden modes was accounted fur with a theoretical model which considers phonon-plasmon coupled modes with wave vectors much larger than those given by the regular q approximate to 0 wave vector transferred by photons. Ionized acceptor impurities provide such additional wave vector transfer through elastic scattering of the photoexcited electrons and holes. It is demonstrated that the experimental values for position and linewidth of the peaks are well described by the theoretical calculations when Frohlich-type and deformation potential mechanisms are considered as means of interaction. (C) 1996 American Institute of Physics.
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页码:2388 / 2395
页数:8
相关论文
共 25 条
[1]  
CARDONA M, 1982, TOPICS APPL PHYSIC 2, V59, P49
[2]   RAMAN EFFECT IN ZINC OXIDE [J].
DAMEN, TC ;
PORTO, SPS ;
TELL, B .
PHYSICAL REVIEW, 1966, 142 (02) :570-&
[3]  
FUKUSAWA R, 1992, JPN J APPL PHYS, V31, P2139
[4]   ABSOLUTE CROSS-SECTION OF 1ST-ORDER RAMAN-SCATTERING IN GAAS [J].
GRIMSDITCH, MH ;
OLEGO, D ;
CARDONA, M .
PHYSICAL REVIEW B, 1979, 20 (04) :1758-1761
[5]   INELASTIC LIGHT-SCATTERING FROM HEAVILY DOPED AND HIGHLY COMPENSATED GAAS-SI [J].
KAMIJOH, T ;
HASHIMOTO, A ;
TAKANO, H ;
SAKUTA, M .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2382-2386
[6]   LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].
KRESSEL, H ;
HAWRYLO, FZ ;
LEFUR, P .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+
[7]   QUANTITATIVE-EVALUATION OF SUBSTRATE-TEMPERATURE DEPENDENCE OF GE INCORPORATION IN GAAS DURING MOLECULAR-BEAM EPITAXY [J].
KUNZEL, H ;
FISCHER, A ;
PLOOG, K .
APPLIED PHYSICS, 1980, 22 (01) :23-30
[8]  
LOPEZLOPEZ M, COMMUNICATION
[9]   RAMAN-STUDY OF LONGITUDINAL OPTICAL PHONON-PLASMON COUPLING AND DISORDER EFFECTS IN HEAVILY BE-DOPED GAAS [J].
MLAYAH, A ;
CARLES, R ;
LANDA, G ;
BEDEL, E ;
MUNOZYAGUE, A .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) :4064-4070
[10]   OBSERVATION OF INTERACTION OF PLASMONS WITH LONGITUDINAL OPTICAL PHONONS IN GAAS [J].
MOORADIAN, A ;
WRIGHT, GB .
PHYSICAL REVIEW LETTERS, 1966, 16 (22) :999-+