Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon

被引：22

作者：

Bellmann, M. P. ^{[1
,2
]}

Meese, E. A. ^{[1
]}

Arnberg, L.

机构：

[1] SINTEF Mat & Chem, N-7465 Trondheim, Norway

[2] NTNU, Dept Mat Sci & Engn, N-7491 Trondheim, Norway

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Segregation; Numerical simulation; Impurities; Growth from melt; Accelerated crucible rotation technique; Solar cell; CADMIUM ZINC TELLURIDE; TECHNIQUE ACRT; SOLIDIFICATION; SIMULATION; INTERFACE; BUOYANCY; FLOWS;

D O I：

10.1016/j.jcrysgro.2010.10.069

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have performed axisymmetric, transient simulations of the vertical Bridgman growth of mc-silicon to study the effect of the accelerated crucible rotation technique (ACRT) on the melt flow and impurity segregation. A solute transport model has been applied to predict the final segregation pattern of impurities in a circular ingot. The sinusoidal ACRT rotation cycle considered here suppresses mixing in the melt near the center, resulting in diffusion-limited mass transport. Therefore the radial impurity segregation is increased towards the center. The effect of increased radial segregation is intensified for low values of the Ekman time scale. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：239 / 243

页数：5

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