Current blocking in InP/InGaAs double heterostructure bipolar transistors

被引：7
作者：
McKinnon, WR
McAlister, SP
Abid, Z
Guzzo, EE
机构：
[1] Inst. for Microstructural Sciences, National Research Council of Canada, Ottawa
[2] Bell Northern Research, Box 2511, Station C, Ottawa
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 05期
关键词：
D O I：
10.1063/1.361108
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The one-flux analysis of double-heterostructure bipolar transistors with composite collectors in the preceding article W. R. McKinnon, J. Appl. Phys. 79, 2762 (1996) is compared to drift-diffusion calculations and to measurements on InP/InGaAs/InP/composite collectors-double heterostructure bipolar transistors. For quantitative agreement we include the effects of ionized impurities in the space-charge regions, and an approximate treatment of Fermi-Dirac statistics.
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页码：2771 / 2778
页数：8
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