Field effect transistors for terahertz detection - silicon versus III-V material issue

被引：10

作者：

Knap, W. ^{[1
,2
]}

Videlier, H. ^{[1
,2
]}

Nadar, S. ^{[1
,2
]}

Coquillat, D. ^{[1
,2
]}

Dyakonova, N. ^{[1
,2
]}

Teppe, F. ^{[1
,2
]}

Bialek, M. ^{[3
]}

Grynberg, M. ^{[3
]}

Karpierz, K. ^{[3
]}

Lusakowski, J. ^{[3
]}

Nogajewski, K. ^{[3
]}

Seliuta, D. ^{[4
]}

Kasalynas, I. ^{[4
]}

Valusis, G. ^{[4
]}

机构：

[1] CNRS, F-34095 Montpellier, France

[2] Univ Montpellier 2, F-34095 Montpellier, France

[3] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[4] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

OPTO-ELECTRONICS REVIEW | 2010年 / 18卷 / 03期

关键词：

THz detection; imaging; field-effect transistors; ELECTRON-MOBILITY TRANSISTORS; RESONANT DETECTION; PLASMA-WAVES; RADIATION; SUBTERAHERTZ; GENERATION; MECHANISM;

D O I：

10.2478/s11772-010-1018-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Nonlinear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs.

引用

页码：225 / 230

页数：6

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